Transcend MTE662T2 2 TB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4)
Transcend MTE662T2 2 TB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4)
SKU: 1071880394 MFR: Transcend Information Inc
GTIN: 760557845058
Product Description
Transcend MTE662T2 2 TB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4) - 2 DWPD
Manufacturer : Transcend Information Inc
Manufacturer Part No : TS2TMTE662T2
Features
- Store as many documents pictures and videos as you need with 2 TB capacity
- PCI Express NVMe 3.0 x4 interface provides quick data transfer and greater throughput
Product Details
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers this density breakthrough greatly improves storage efficiency and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20?~75?.
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Transcend MTE662T2 2 TB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4) - 2 DWPD
Manufacturer : Transcend Information Inc
Manufacturer Part No : TS2TMTE662T2
Features
- Store as many documents pictures and videos as you need with 2 TB capacity
- PCI Express NVMe 3.0 x4 interface provides quick data transfer and greater throughput
Product Details
Transcend's MTE662T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE662T2 features state-of-the-art 3D NAND technology which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers this density breakthrough greatly improves storage efficiency and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology the MTE662T2 is fully tested in-house to guarantee reliability in mission-critical applications boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20?~75?.
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